BUZ100

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 50 V 60 A 0.018 Ω TO-220 AB C67078-S1348-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 101 °C ID 60 A Pulsed drain current TC = 25 °C IDpuls 240 Avalanche energy, single pulse ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C EAS 250 mJ Reverse diode dv/dt IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C dv/dt 6 kV/µs Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 250 W Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC ≤ 0.6 K/W Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 175 / 56