APM3055L
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Features
@ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252
ApplicationsSymbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter
Maximum Drain Current Continuous Maximum Drain Current Pulsed
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Symbol PD Parameter Maximum Power Dissipation TA=100°C TJ TSTG Maximum Junction Temperature Storage Temperature Range TO-252
Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VSD Dynamic Q gd tON td(ON) tr td(OFF) tf tOFF Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Time Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-off Time Diode Forward Voltage